High-resolution depth profiling in ultrathin Al2O3 films on Si

Gusev EP, Copel M, Cartier E, Baumvol IJR , Krug C, Gribelyuk MA

APPLIED PHYSICS LETTERS 76 (2): 176-178 JAN 10 2000

Cited References: 15 Times Cited: 132

Abstract:  A combination of two complementary depth profiling techniques with sub-nm depth resolution, nuclear resonance profiling and medium energy ion scattering, and cross-sectional high-resolution transmission electron microscopy were used to study compositional and microstructural aspects of ultrathin (sub-10 nm) Al2O3 films on silicon. All three techniques demonstrate uniform continuous films of stoichiometric Al2O3 with abrupt interfaces. These film properties lead to the ability of making metal-oxide semiconductor devices with Al2O3 gate dielectric with equivalent electrical thickness in the sub-2 nm range.

(C) 2000 American Institute of Physics. [S0003-6951(00)02402-5].

Addresses:  Gusev EP (reprint author), IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
UFRGS, Inst Fis, Porto Alegre, RS BR-91509900 Brazil
IBM Corp, Analyt Serv, Hopewell Junction, NY 12533 USA

Publisher:  AMER INST PHYSICS, CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 USA

Subject Category:  PHYSICS, APPLIED

IDS Number:  270NA
ISSN:  0003-6951